面向散热应用的碳化硅表面热丝化学气相沉积金刚石膜生长速率

doi:10.16183/j.cnki.jsjtu.2022.043

上海交通大学学报 ›› 2023, Vol. 57 ›› Issue (8): 1078-1085.doi: 10.16183/j.cnki.jsjtu.2022.043

所属专题：《上海交通大学学报》2023年“材料科学与工程”专题

面向散热应用的碳化硅表面热丝化学气相沉积金刚石膜生长速率

李维汉¹, 乔煜², 疏达¹^,³(), 王新昶²

1.安徽工程大学机械工程学院, 安徽芜湖 241000
2.上海交通大学机械与动力工程学院,上海 200240
3.奥卢大学纳米与分子材料研究中心, 芬兰奥卢 FIN-90014

收稿日期:2022-02-28 修回日期:2022-04-13 接受日期:2022-05-24 出版日期:2023-08-28 发布日期:2023-08-31
通讯作者: 疏达,教授; E-mail: sd@ahpu.edu.cn.
作者简介:李维汉(1998-),硕士生,主要从事金刚石材料制备.
基金资助:
国家自然科学基金(52175423);上海市自然科学基金(22ZR1433200);广东省重点领域研发计划项目(2020B010185001)

Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

LI Weihan¹, QIAO Yu², SHU Da¹^,³(), WANG Xinchang²

1. School of Mechanical Engineering, Anhui Polytechnic University, Wuhu 241000, Anhui, China
2. School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
3. Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu FIN-90014, Finland

Received:2022-02-28 Revised:2022-04-13 Accepted:2022-05-24 Online:2023-08-28 Published:2023-08-31

摘要/Abstract

摘要：

金刚石具有极高的导热系数,在热管理中具有广阔的应用前景.基于热丝化学气相沉积法,采用多次沉积工艺在碳化硅表面制备了金刚石厚膜.采用扫描电子显微镜和拉曼光谱仪对金刚石膜进行了表征,系统地研究了热丝功率、碳源浓度和反应压力等工艺参数对金刚石生长速率及质量的影响.研究结果表明,当热丝功率为1 600 W、碳源浓度在形核阶段为18/300和生长阶段为14/300、反应压力为4 kPa时制备的金刚石膜质量最佳,此时金刚石膜生长速率约为1.4 μm/h.

关键词: 热丝化学气相沉积, 金刚石膜, 生长速率, 质量, 散热

Abstract:

Diamond has an extremely high thermal conductivity, making it to have a great potential as a heat dissipation material. Based on the hot filament chemical vapor deposition (HFCVD) technique, diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper. The scanning electron microscopy (SEM) and Raman spectroscopy were adopted for characterizing the samples. The influences of filament power, carbon concentration, and reactive pressure on the growth rate and quality of the diamond films were systematically studied. It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1 600 W, a methane/hydrogen flux ratio of 18/300 (nucleation stage) and 14/300 (growth stage), and a reactive pressure of 4 kPa. The corresponding growth rate is 1.4 μm/h.

Key words: hot filament chemical vapor deposition (HFCVD), diamond film, growth rate, quality, heat dissipation

中图分类号:

TQ163
TB 383

李维汉, 乔煜, 疏达, 王新昶. 面向散热应用的碳化硅表面热丝化学气相沉积金刚石膜生长速率[J]. 上海交通大学学报, 2023, 57(8): 1078-1085.

LI Weihan, QIAO Yu, SHU Da, WANG Xinchang. Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications[J]. Journal of Shanghai Jiao Tong University, 2023, 57(8): 1078-1085.

图/表 13

图1

表1

图2

图3

图4

图5

图6

图7

图8

图9

图10

图11

图12

参考文献 21

[1]	贾鑫, 魏俊俊, 黄亚博, 等. 金刚石散热衬底在GaN基功率器件中的应用进展[J]. 表面技术, 2020, 49(11): 111-123.
	JIA Xin, WEI Junjun, HUANG Yabo, et al. Application progress of diamond heat dissipation substrate in GaN-based power devices[J]. Surface Technology, 2020, 49(11): 111-123.
[2]	张旺玺. 化学气相沉积法合成金刚石的研究进展[J]. 陶瓷学报, 2021, 42(4): 537-546.
	ZHANG Wangxi. Research progress in synthesis of diamond prepared with chemical vapour deposition (CVD)[J]. Journal of Ceramics, 2021, 42(4): 537-546.
[3]	戴达煌, 周克崧. 金刚石薄膜沉积制备工艺与应用[M]. 北京: 冶金工业出版社, 2001: 9-13.
	DAI Dahuang, ZHOU Kesong. Preparation process and application of diamond thin film deposition[M]. Beijing: Metallurgical Industry Press, 2001: 9-13.
[4]	MONTES GUTIERREZ J A, ALCANTAR PENA J J, DE OBALDIA E, et al. Afterglow, thermoluminescence and optically stimulated luminescence characterization of micro-, nano-and ultrananocrystalline diamond films grown on silicon by HFCVD[J]. Diamond and Related Materials, 2018, 85: 117-124. doi: 10.1016/j.diamond.2018.03.031 URL
[5]	CHEN N C, PU L W, SUM F H, et al. Tribological behavior of HFCVD multilayer diamond film on silicon carbide[J]. Surface & Coatings Technology, 2015, 272: 66-71. doi: 10.1016/j.surfcoat.2015.04.023 URL
[6]	PENG J H, ZENG J W, XIONG C, et al. The effect of interlayer reactivity on the quality of diamond coating by HFCVD deposition[J]. Journal of Alloys and Compounds, 2020, 835: 155035. doi: 10.1016/j.jallcom.2020.155035 URL
[7]	WANG H, WANG C C, WANG X C, et al. Effects of carbon concentration and gas pressure with hydrogen-rich gas chemistry on synthesis and characterizations of HFCVD diamond films on WC-Co substrates[J]. Surface & Coatings Technology, 2021, 409: 126839. doi: 10.1016/j.surfcoat.2021.126839 URL
[8]	DENG F M, HAO C, GUO Z H, et al. Effects of carbonization of filaments on CVD diamond thick films prepared by HFCVD method[J]. Journal of Superhard Materials, 2020, 42(5): 340-347. doi: 10.3103/S1063457620050160
[9]	DAMM D D, CONTIN A, CARDOSO L D R, et al. A novel method to mitigate residual stress in CVD diamond film on steel substrates with a single intermediate layer[J]. Surface & Coatings Technology, 2019, 357: 93-102. doi: 10.1016/j.surfcoat.2018.09.067 URL
[10]	陈波. YG6硬质合金基体表面沉积金刚石碳化硅复合薄膜研究[D]. 重庆: 重庆理工大学, 2019.
	CHEN Bo. Deposition of diamond silicon-carbide composite film on YG6 cemented carbide substrate[D]. Chongqing: Chongqing University of Technology, 2019.
[11]	WANG X, CUI Y, ZHANG J, et al. Erosive wear performance of boron-doped diamond films on different substrates[J]. ARCHIVE Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology, 2013, 228(3): 352-361.
[12]	严朝辉, 汪建华, 满卫东, 等. CVD金刚石厚膜的机械抛光研究[J]. 金刚石与磨料磨具工程, 2007(3): 32-35.
	YAN Zhaohui, WANG Jianhua, MAN Weidong, et al. Study of mechanical polishing of CVD diamond thick films[J]. Diamond & Abrasive Engineering, 2007(3): 32-35.
[13]	王新昶. 高性能金刚石薄膜的制备, 摩擦学性能及其在内孔表面的应用研究[D]. 上海: 上海交通大学, 2015.
	WANG Xinchang. Study on fabrication, tribological properties of high performance diamond films and application on hole surface[D]. Shanghai: Shanghai Jiao Tong University, 2015.
[14]	MUKHERJEE D, OLIVEIRA F, TRIPPE S C, et al. Deposition of diamond films on single crystalline silicon carbide substrates[J]. Diamond and Related Materials, 2019, 101: 107625. doi: 10.1016/j.diamond.2019.107625 URL
[15]	CHEN N C, SUN F H. Effect of multilayer technology on surface properties of diamond coated silicon carbide with surface defects[J]. Applied Mechanics & Materials, 2012, 217-219: 1318-1322.
[16]	PRABHAKARAN G S, BHATTACHARYA S, RAO M. A comparative study of the mechanical and tribological properties of intermittently and continuously grown multilayer diamond films on RB-SiC[J]. Diamond and Related Materials, 2020, 110: 108140. doi: 10.1016/j.diamond.2020.108140 URL
[17]	赵刚, 赵江, 张亚非. 金刚石晶体生长研究进展[J]. 上海交通大学学报, 2010, 44(4): 584-587.
	ZHAO Gang, ZHAO Jiang, ZHANG Yafei. Research progress on synthetic diamond crystals[J]. Journal of Shanghai Jiao Tong University, 2010, 44(4): 584-587.
[18]	ALI M, UERGEN M. Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations[J]. Applied Surface Science, 2011, 257(20): 8420-8426. doi: 10.1016/j.apsusc.2011.04.097 URL
[19]	TAKAMORI Y, NAGAI M, TABAKOYA T, et al. Insight into temperature impact of Ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition[J]. Diamond and Related Materials, 2021, 118: 108515. doi: 10.1016/j.diamond.2021.108515 URL
[20]	SU Q F, SHI W M, LI D M, et al. Effects of carbon concentration on properties of nano-diamond films[J]. Applied Surface Science, 2012, 258(10): 4645-4648. doi: 10.1016/j.apsusc.2012.01.047 URL
[21]	WENG J, LIU F, XIONG L W, et al. Investigation on the influence of high deposition pressure on the mcirostructure and hydrogen impurity incorporated in nanocrystalline diamond films[J]. Journal of Crystal Growth, 2018, 495: 1-8. doi: 10.1016/j.jcrysgro.2018.05.011 URL

沉积参数	形核阶段	生长阶段
甲烷/氢气流量之比	(14~18)/300	(14~18)/300
反应压力/kPa	1.0~5.0	1.0~5.0
热丝温度/℃	2 000~2 500	2 000~2 500
衬底温度/℃	600~1 000	600~1 000
沉积时间/h	0.5	3
热丝与衬底距离/mm	10	10
热丝间距/mm	15	15

面向散热应用的碳化硅表面热丝化学气相沉积金刚石膜生长速率

Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 13

参考文献 21

相关文章 15

编辑推荐

Metrics

本文评价

[1]	邹琳, 闫豫龙, 陶凡, 柳迪伟, 郑云龙. 波浪锥型风力俘能结构能量转换效率[J]. 上海交通大学学报, 2023, 57(8): 1067-1077.
[2]	张建, 胡小锋, 张亚辉. 基于自步学习的刀具加工过程监测数据异常检测方法[J]. 上海交通大学学报, 2023, 57(10): 1346-1354.
[3]	余威, 杨欢红, 焦伟, 周泽. 基于优劣解距离算法的光储配电网自适应虚拟惯性控制策略[J]. 上海交通大学学报, 2022, 56(10): 1317-1324.
[4]	惠久武, 凌君, 栾振华, 王改霞, 董贺, 袁景淇. 核电站蒸汽发生器再循环水质量流量实时估计方法[J]. 上海交通大学学报, 2022, 56(1): 21-27.
[5]	沈慧, 刘世民, 许敏俊, 黄德林, 鲍劲松, 郑小虎. 面向加工领域的数字孪生模型自适应迁移方法[J]. 上海交通大学学报, 2022, 56(1): 70-80.
[6]	庞宇, 黄文焘, 吴骏, 邰能灵, 孙国亮. 船舶大功率脉冲负载抗冲击供电系统[J]. 上海交通大学学报, 2021, 55(10): 1197-1209.
[7]	尤舒曼, 李杰, 赵亦希, 胡逸辉. 柔性翻边成形工艺参数研究[J]. 上海交通大学学报, 2021, 55(10): 1246-1254.
[8]	王飞, 丁伟, 邓德衡, 吴小峰. 水下多缆多体拖曳系统运动建模与模拟计算[J]. 上海交通大学学报, 2020, 54(5): 441-450.
[9]	胡济珠, 周俊, 李云云. 基于有机/无机复合材料的航天环境下高效热电转换技术研究 [J]. 空天防御, 2020, 3(2): 72-75.
[10]	马哲，周婷，孙家文，房克照，翟钢军. 基于改进质量源造波方法的非线性波数值模拟[J]. 上海交通大学学报, 2020, 54(1): 60-68.
[11]	肖鹏，刘宏春，简一帆，赵阳，李伟，唐涛. 对核电厂DCS中信号质量位设置问题的思考[J]. 上海交通大学学报, 2019, 53(Sup.1): 12-16.
[12]	李健，陆繁莉，董威，蔡一凡，许梦玫. 基于数值模拟的芯片冷却散热器结构优化[J]. 上海交通大学学报（自然版）, 2019, 53(4): 461-467.
[13]	赵亮，张巍，贺治国，谈利明，蒋后硕. 层结环境中浮力羽流的质量输移过程[J]. 上海交通大学学报（自然版）, 2019, 53(4): 473-479.
[14]	郭春雨1,刘恬1，赵庆新1，郝浩浩2. 短波中标称伴流场特性分析[J]. 上海交通大学学报（自然版）, 2019, 53(2): 170-178.
[15]	梁园华, 韦斯俊, 孙政策, 杨清峡. 深水张紧式聚酯缆系泊系统疲劳分析研究[J]. 海洋工程装备与技术, 2018, 5(增刊): 226-233.