Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

doi:10.16183/j.cnki.jsjtu.2022.043

Abstract

Abstract:

Diamond has an extremely high thermal conductivity, making it to have a great potential as a heat dissipation material. Based on the hot filament chemical vapor deposition (HFCVD) technique, diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper. The scanning electron microscopy (SEM) and Raman spectroscopy were adopted for characterizing the samples. The influences of filament power, carbon concentration, and reactive pressure on the growth rate and quality of the diamond films were systematically studied. It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1 600 W, a methane/hydrogen flux ratio of 18/300 (nucleation stage) and 14/300 (growth stage), and a reactive pressure of 4 kPa. The corresponding growth rate is 1.4 μm/h.

Key words: hot filament chemical vapor deposition (HFCVD), diamond film, growth rate, quality, heat dissipation

CLC Number:

TQ163
TB 383

LI Weihan, QIAO Yu, SHU Da, WANG Xinchang. Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications[J]. Journal of Shanghai Jiao Tong University, 2023, 57(8): 1078-1085.

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沉积参数	形核阶段	生长阶段
甲烷/氢气流量之比	(14~18)/300	(14~18)/300
反应压力/kPa	1.0~5.0	1.0~5.0
热丝温度/℃	2 000~2 500	2 000~2 500
衬底温度/℃	600~1 000	600~1 000
沉积时间/h	0.5	3
热丝与衬底距离/mm	10	10
热丝间距/mm	15	15