Effect of Device Size on Pulse Quenching in a 65 nm Bulk CMOS Process

Abstract

Abstract: The connection between the size of passive inverter and trend of pulse quenching was studied by using circuit level simulation under 65nm bulk complementary metaloxidesemiconductor transistor (CMOS) process. It is found that bipolar amplification plays an important role in pulse quenching trend after changing the size of passive inverter. Pulse quenching will be zoomed in after increasing the size of passive inverter, whose inner bipolar amplification is stronger. In the contrast, pulse quenching will be zoomed out after increasing the size of passive inverter.

Key words: charge sharing, pulse quenching, bipolar amplification, circuit level simulation

CLC Number:

TN 386.1

LI Peng, ZHAO Zhen-Yu, ZHENG Chao, ZHANG Min-Xuan. Effect of Device Size on Pulse Quenching in a 65 nm Bulk CMOS Process[J]. Journal of Shanghai Jiaotong University, 2013, 47(01): 33-38.

References

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