基于概率稀疏自注意力的IGBT模块剩余寿命跨工况预测

doi:10.16183/j.cnki.jsjtu.2021.538

摘要/Abstract

摘要：

为提高绝缘栅双极型晶体管(IGBT)模块跨工况剩余寿命的预测精度以提升其可靠性,针对不同工况下IGBT模块的瞬态热阻特征提出一种基于概率稀疏自注意力机制和迁移学习的剩余使用寿命预测方法.搭建了IGBT模块加速老化试验台,在不同温度区间进行IGBT模块功率循环实验,采集不同工况下该模块全生命周期状态数据,计算获得IGBT模块衰退过程中的瞬态热阻变化数据,提取并筛选能准确反映IGBT模块老化状态的瞬态热阻特征,并使用所提方法开展跨工况剩余使用寿命预测.实验结果表明,提出的IGBT模块剩余寿命的跨工况预测方法精度明显优于其他对比方法,特别是IGBT模块早期衰退过程中的剩余寿命预测精度得到了显著提升.

关键词: 绝缘栅双极型晶体管模块, 瞬态热阻, 剩余寿命预测, 概率稀疏自注意力, 迁移学习

Abstract:

In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention mechanism and transfer learning was proposed based on the transient thermal resistance features of IGBT modules under different working conditions. An accelerated aging test bench of the IGBT module was designed ang built to perform power cycling experiments in different temperature ranges, and state data of full life-time under different working conditions were collected. Transient thermal resistance change data during the IGBT module degradation were calculated, and the transient thermal features that can accurately reflect the aging state of the IGBT module were extracted and selected. These features were used to predict the RUL of IGBT modules across different working conditions based on the proposed method. The experimental result shows that the accuracy of the proposed RUL prediction method of IGBT modules across working conditions outperforms other compared methods. Particularly, the RUL prediction accuracy during the early degradation stage has been significantly improved.

Key words: insulated gate bipolar transistor(IGBT) module, transient thermal resistance, remaining useful life (RUL) prediction, ProbSparse self-attention, transfer learning

中图分类号:

钟智伟, 王誉翔, 黄亦翔, 肖登宇, 夏鹏程, 刘成良. 基于概率稀疏自注意力的IGBT模块剩余寿命跨工况预测[J]. 上海交通大学学报, 2023, 57(8): 1005-1015.

ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang. Remaining Useful Life Prediction of IGBT Modules Across Working Conditions Based on ProbSparse Self-Attention[J]. Journal of Shanghai Jiao Tong University, 2023, 57(8): 1005-1015.

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模块名	ΔT_j/ ℃	T_jm/ ℃	T_{j_min}/ ℃	T_{j_max}/ ℃	N/次
IGBT1	80	80	40	120	148 239
IGBT2	80	90	50	130	104 298
IGBT3	80	130	90	170	68 115

特征	编号	特征	编号
最小值	X₁	绝对中位差	X₁₂
最大值	X₂	峭度	X₁₃
极差	X₃	均方值	X₁₄
均值	X₄	均方根	X₁₅
中位数	X₅	绝对均值	X₁₆
第一四分位数	X₆	方根幅值	X₁₇
第三四分位数	X₇	脉冲因子	X₁₈
方差	X₈	波形因子	X₁₉
标准差	X₉	裕度因子	X₂₀
偏度	X₁₀	峰值因子	X₂₁
标准误差	X₁₁	双对数比率	X₂₂

网络模块	具体实现	参数	输出尺寸
输入层	-	-	50×12
嵌入层	一维卷积	卷积核为12×3×256	50×256
概率稀疏自注意力	线性变换	权重为50×256×32	50×32
模块	注意力计算	-	50×32
(n=8, d_k=32)	合并	-	50×256
后处理模块	层正则化	-	50×256
	一维卷积	卷积核为256×1×128	50×128
	一维卷积	卷积核为128×1×256	50×256
	层正则化	-	50×256
	一维卷积	卷积核为256×5×64	46×64
	全局池化层	-	1×64
全连接模块	全连接层	权重为64×32	32
	全连接层	权重为32×1	1

方法	IGBT1→IGBT2		IGBT1→IGBT3		IGBT2→IGBT1		IGBT2→IGBT3		IGBT3→IGBT1		IGBT3→IGBT2
方法	MSE	MAE	MSE	MAE	MSE	MAE	MSE	MAE	MSE	MAE	MSE	MAE
本文模型	0.001 6	0.031 9	0.001 0	0.024 3	0.002 6	0.041 9	0.001 6	0.033 0	0.005 8	0.058 5	0.001 6	0.032 5
gMLP	0.006 1	0.071 3	0.088 7	0.225 8	0.006 4	0.067 5	0.095 6	0.253 8	0.008 1	0.065 0	0.026 8	0.128 6
LSTM	0.009 3	0.074 3	0.027 3	0.129 4	0.009 2	0.081 7	0.033 1	0.155 7	0.013 5	0.084 5	0.027 6	0.129 4
TCA+gMLP	0.004 2	0.056 6	0.012 7	0.088 9	0.005 5	0.059 1	0.007 5	0.074 0	0.010 0	0.079 1	0.015 5	0.103 2
CORAL+LSTM	0.007 2	0.058 1	0.025 2	0.123 3	0.004 6	0.055 6	0.042 2	0.165 3	0.032 5	0.137 8	0.043 1	0.159 8

方法	训练时间/s	推理时间/s
传统自注意力机制	0.0167	0.0050
概率稀疏自注意力机制	0.0110	0.0031
相对提升比例	34.13%	38.00%