J Shanghai Jiaotong Univ Sci ›› 2023, Vol. 28 ›› Issue (2): 172-179.doi: 10.1007/s12204-022-2462-1
KHAN Mohibul, ALAM Md. Shabaz, AHMED Sk. Faruque
收稿日期:
2021-05-21
接受日期:
2021-07-05
出版日期:
2023-03-28
发布日期:
2023-03-21
KHAN Mohibul, ALAM Md. Shabaz, AHMED Sk. Faruque∗
Received:
2021-05-21
Accepted:
2021-07-05
Online:
2023-03-28
Published:
2023-03-21
摘要: 采用射频/直流反应溅射技术在玻璃衬底上制备了未掺杂和掺铜氧化锌(Zn1-xCuxO,其中x = 0~0.065)的纳米晶体薄膜。本工作旨在研究ZnO和Cu掺杂ZnO薄膜的晶体结构,并研究Cu掺杂对ZnO薄膜光学带隙的影响。利用X射线衍射仪(XRD)、扫描电子显微镜和原子力显微镜对纳米级薄膜的结晶度、薄膜厚度和表面形貌进行了鉴定和确认。在衍射角34.44°密勒指数(002)的XRD峰值证实了ZnO薄膜的存在。由XRD(002)峰计算得出,当ZnO薄膜中Cu的原子分数(xCu)从0增加到6.5%时,未掺杂ZnO薄膜的晶粒尺寸从27 nm减小到22 nm。通过傅里叶变换红外光谱仪研究了在400~4000 cm-1波数范围内所有沉积薄膜的不同键合信息。通过紫外可见分光光度计分析了所有沉积薄膜的光学带隙能:随着xCu从0增加到6.5%,其变化范围为3.35 eV到3.19 eV。随着xCu从0增加到6.5%,沉积薄膜的Urbach能量从115 meV增加到228 meV。
中图分类号:
KHAN Mohibul, ALAM Md. Shabaz, AHMED Sk. Faruque. 射频/直流溅射沉积铜掺杂氧化锌薄膜的合成与表征[J]. J Shanghai Jiaotong Univ Sci, 2023, 28(2): 172-179.
KHAN Mohibul, ALAM Md. Shabaz, AHMED Sk. Faruque∗. Synthesis and Characterization of Copper Doped Zinc Oxide Thin Films Deposited by RF/DC Sputtering Technique[J]. J Shanghai Jiaotong Univ Sci, 2023, 28(2): 172-179.
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