Journal of Shanghai Jiao Tong University

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General Electromagnetic Transients Equivalent Modeling Method of N-Terminal Power Electronic Devices

  

  1. 1. Key Laboratory of Electrical Engineering, Ministry of Education,  Shanghai Jiao Tong University, 200240, Shanghai, China;

    2. Jiaxing Power Supply Company of State Grid Zhejiang Electric Power Co.,Ltd, 314033, Zhejiang, China

Abstract: With the increasing power-electronization of modern power systems, higher demands are placed on the generality and computational efficiency of electromagnetic transient modeling and simulation methods. Among existing approaches, detailed models suffer from low simulation efficiency and are unsuitable for large-scale systems; average-value models compromise simulation accuracy by neglecting internal transient characteristics; while equivalent models lack sufficient generality to accommodate diverse power electronic topologies. To address these challenges, this paper proposes a universal equivalent modeling method for N-terminal power electronic devices. The proposed approach not only demonstrates high versatility by being applicable to arbitrary power electronic topologies, but also significantly improves simulation efficiency through internal node elimination and a specially designed parallel simulation algorithm, while maintaining required accuracy. 

Key words: power electronics, electromagnetic transient simulation, N-terminal electrical device, equivalent modeling

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