Journal of shanghai Jiaotong University (Science) ›› 2013, Vol. 18 ›› Issue (5): 520-525.doi: 10.1007/s12204-013-1436-8

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A Cryogenic 10-bit Successive Approximation Register Analog-to-Digital Converter Design with Modified Device Model

A Cryogenic 10-bit Successive Approximation Register Analog-to-Digital Converter Design with Modified Device Model

ZHAO Yi-qiang1* (赵毅强), YANG Ming1 (杨 明), ZHAO Hong-liang2 (赵宏亮)   

  1. (1. School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China; 2. College of Physics, Liaoning University, Shenyang 110036, China)
  2. (1. School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China; 2. College of Physics, Liaoning University, Shenyang 110036, China)
  • Online:2013-10-31 Published:2013-12-05
  • Contact: ZHAO Yi-qiang(赵毅强) E-mail:yq_zhao@tju.edu.cn

Abstract: A 10-bit 500 kHz low-power successive approximation register (SAR) analog-to-digital converter (ADC) for cryogenic infrared readout circuit is proposed. To improve the simulation accuracy of metal-oxidesemiconductor field-effect transistors (MOSFETs), corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77K. Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K. The SAR ADC is fabricated and verified by standard 0.35 μm complementary metal oxide semiconductor (CMOS) process. At 77 K, measurement results show that signal to noise and distortion ratio (SNDR) is 54.74 dB and effective number of bits (ENOB) is 8.8 at the sampling rate of 500 kHz. The total circuit consumes 0.6mW at 3.3V power supply.

Key words: cryogenic| device model| parameter extraction| comparator

摘要: A 10-bit 500 kHz low-power successive approximation register (SAR) analog-to-digital converter (ADC) for cryogenic infrared readout circuit is proposed. To improve the simulation accuracy of metal-oxidesemiconductor field-effect transistors (MOSFETs), corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77K. Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K. The SAR ADC is fabricated and verified by standard 0.35 μm complementary metal oxide semiconductor (CMOS) process. At 77 K, measurement results show that signal to noise and distortion ratio (SNDR) is 54.74 dB and effective number of bits (ENOB) is 8.8 at the sampling rate of 500 kHz. The total circuit consumes 0.6mW at 3.3V power supply.

关键词: cryogenic| device model| parameter extraction| comparator

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