Temperature Dependence of Microwave Dielectric Performance of Silica

doi:10.1007/s12204-012-1358-x

上海交通大学学报（英文版） ›› 2012, Vol. 17 ›› Issue (6): 748-754.doi: 10.1007/s12204-012-1358-x

Temperature Dependence of Microwave Dielectric Performance of Silica

(1. Teaching and Research Section of Physics, Chengdu Medical College, Chengdu 610083, China; 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 3. Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing 100076, China)

出版日期:2012-12-31 发布日期:2012-12-30
通讯作者: ZHANG Ting1,2*(张婷) E-mail:flyrain68@126.com

Temperature Dependence of Microwave Dielectric Performance of Silica

(1. Teaching and Research Section of Physics, Chengdu Medical College, Chengdu 610083, China; 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 3. Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing 100076, China)

Online:2012-12-31 Published:2012-12-30
Contact: ZHANG Ting1,2*(张婷) E-mail:flyrain68@126.com

摘要/Abstract

摘要： The dielectric properties of silica at temperature from 300 to 1 600K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10^5 level at 2 000 K. The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at high temperature and microwave band, which is currently still difficult to be measured directly.

关键词: silica, dielectric performance, high temperature, microwave

Abstract: The dielectric properties of silica at temperature from 300 to 1 600K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10^5 level at 2 000 K. The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at high temperature and microwave band, which is currently still difficult to be measured directly.

Key words: silica, dielectric performance, high temperature, microwave

中图分类号:

O 522

ZHANG Ting1,2*(张婷), WU Meng-qiang2 (吴孟强), ZHANG Shu-ren2 (张树人), HE Ming2 (何茗),LI. Temperature Dependence of Microwave Dielectric Performance of Silica[J]. 上海交通大学学报（英文版）, 2012, 17(6): 748-754.

ZHANG Ting1,2*(张婷), WU Meng-qiang2 (吴孟强), ZHANG Shu-ren2 (张树人), HE Ming2 (何茗),LI En2 (李恩), WANG Jin-ming3 (王金明), ZHANG Da-hai3 (张大海),HE Feng-mei3 (何凤梅), LI Zhong-ping3 (李仲平). Temperature Dependence of Microwave Dielectric Performance of Silica[J]. Journal of shanghai Jiaotong University (Science), 2012, 17(6): 748-754.

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Temperature Dependence of Microwave Dielectric Performance of Silica

Temperature Dependence of Microwave Dielectric Performance of Silica

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