Journal of Shanghai Jiao Tong University

Journal of Shanghai Jiaotong University >

2022 , Vol. 56 >Issue 12: 1649 - 1657

DOI: https://doi.org/10.16183/j.cnki.jsjtu.2021.522

Electronic Information and Electrical Engineering

A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory

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  • 1. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
    2. Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
    3. Shanghai Institute of Microsystem and Information Technology of Chinese Academy of Sciences, Shanghai 200050, China

Received date: 2021-12-21

  Online published: 2022-06-22

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Abstract

The 1S1R storage unit of 3D phase-change memory is composed of ovonic threshold switch selector (OTS) in series with the phase change memory (PCM) device. In order to solve the problems of the current OTS and PCM circuit simulation models, such as not able to accurately simulate the electrical and physical characteristics of devices, and not suitable for confined PCM, a 1S1R spice model based on Verilog-A is proposed. The model simulates the electrical characteristics of OTS and the changes of current, temperature, melting proportion, crystallization proportion and amorphous proportion in the crystallization, melting and quenching of the PCM. The model has a good convergence and fast simulation speed. The simulation results are consistent with the actual test results of the device. Compared with the traditional model, the simulation and integration of confined PCM melting process, crystal nonlinearity, melting resistivity stability and subthreshold nonlinearity, and bidirectional switching characteristics of OTS are realized. The relationship between OTS subthreshold nonlinear parameter and read voltage window is analyzed. It is found that the read window reaches its maximum when OTS threshold current is approximately equal to PCM threshold current. The results of DC simulation of 1S1R cell and transient simulation of array are displayed, providing the basis for circuit design and simulation of 3D phase-change memory.

Key words： phase change memory (PCM); circuit simulation model; ovonic threshold switch selector; Verilog-A

Cite this article

ZHANG Guangming, LEI Yu, CHEN Houpeng, YU Qiuyao, SONG Zhitang . A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory[J]. Journal of Shanghai Jiaotong University, 2022 , 56(12) : 1649 -1657 . DOI: 10.16183/j.cnki.jsjtu.2021.522

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