Location of Partial Discharge in GIS Based on Electromagnetic Wave Time Reversal

doi:10.16183/j.cnki.jsjtu.2024.038

Abstract

Abstract:

In recent years, as an effective positioning method, electromagnetic wave time reversal (EMTR) technology has begun to be applied in the field of partial discharge. Compared with traditional ultra high frequency (UHF) positioning methods, EMTR technology requires only a single sensor, offering significant advantages and promising application prospects. However, the commonly used maximum field strength and minimum entropy criteria struggle to accurately determine the focusing time and position of time reversal in complex structures. To address these problems, this paper proposes an EMTR location method based on the density-based spatial clustering of applications with noise (DBSCAN) algorithm leveraging the distinct characteristics of waveforms at signal and non-signal sources, and verify the location of partial discharges in gas-insulated switchgear (GIS) using CST Studio Suite simulation software. To verify the field feasibility of EMTR, it develops a laboratory model to conduct partial discharge experiments. The results show that the average positioning error of the EMTR method is less than 20 cm, which can realize accurate positioning of partial discharge sources in GIS. Compared with traditional methods, the EMTR method reduces the number of sensors and improves the anti-interference performance, which has certain advantages.

Key words: electromagnetic wave time reversal (EMTR), partial discharge (PD), location, density-based spatial clustering of applications with noise (DBSCAN) algorithm, gas insulated switchgear (GIS)

CLC Number:

TM733

LI Jiayang, ZHAO Jiuyi, QIAN Yong, LI Guoyu, XU Zhiren, PAN Chao, SHENG Gehao. Location of Partial Discharge in GIS Based on Electromagnetic Wave Time Reversal[J]. Journal of Shanghai Jiao Tong University, 2025, 59(12): 1763-1772.

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外置传感器	坐标/mm	内置传感器	坐标/mm
s1	(325, 0, 235)	s6	(0, 310, 770)
s2	(325, 0, 1 305)	s7	(0, 310, 1 590)
s3	(325, 0, 1 875)	s8	(0, 310, 2 160)
s4	(325, 0, 2 445)	s9	(0, 310, 2 980)
s5	(325, 0, 3 515)

传感器	坐标/mm	误差/mm
s2	(-4.5, -40.0, 467.0)	26.3
s7	(4.7, -53.8, 434.0)	20.1
s2和s3	(-2.2, -19.2, 460.0)	45.6
s7和s9	(3.7, -48.2, 440.0)	26.4
s2和s9	(4.7, -46.9, 427.7)	29.1

局部放电位置	实际坐标/mm	定位坐标/mm	GIS相对误差/%	绝对误差/mm
近内导体	(90, 170, 2 170)	(21, 133, 2 120)	(13.80, 7.40, 1.25)	92.9
近金属外壳	(-210, -20, 2 200)	(-82, -105, 2 308)	(25.60, 17.00, 2.70)	187.8
近腔体切面中心	(0, 0, 2 230)	(111, -110, 2 157)	(22.20, 22.00, 1.83)	172.5
近盆式绝缘子	(-70, 100, 2 405)	(-18, 234, 2 447)	(14.00, 26.80, 1.05)	149.7