Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction

doi:10.16183/j.cnki.jsjtu.2023.577

Abstract

Abstract:

It is difficult for the existing junction temperature algorithms of insulated gate bipolar transistor (IGBT) to evaluate the impact on the thermal diffusion angle of the IGBT module under varying output power and heat dissipation conditions of optical storage unit interface converters in optical storage microgrids, which results in limited accuracy of junction temperature algorithm and poses a huge challenge to system thermal management. To address the above issues, a junction temperature algorithm of IGBT in interface converters in optical storage microgrid systems is proposed considering three-dimensional transverse heat conduction (3-D THC). First, a physical thermal model of power devices is established considering the thermal coupling between multiple chips in the optical storage microgrid system. Then, a junction temperature algorithm considering 3-D THC is further proposed based on the established physical model, and a thermal network model considering 3-D THC is established, which effectively improves the calculation accuracy of current state thermal parameters and power module thermal diffusion angle. Finally, the accuracy of the proposed model is verified using finite element analysis in the PinFin heat sink structure. The simulation results show that compared with various junction temperature algorithms, the proposed algorithm has the smallest error in junction temperature calculation under steady-state and sudden power change conditions, with approximately 3.11% and 3.65% respectively, which increases accuracy by 11.53% and 61.93% respectively compared with the algorithm not considering thermal diffusion angle (α=0). The proposed algorithm also has the highest junction temperature accuracy and the smallest error under different heat dissipation conditions.

Key words: optical storage microgrid system, insulated gate bipolar transistor (IGBT) modules, junction temperature calculation, three-dimensional transverse heat conduction (3-D THC), finite element analysis

CLC Number:

TM464

XU Yang, XIAO Qian, JIA Hongjie, JIN Yu, MU Yunfei, LU Wenbiao. Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction[J]. Journal of Shanghai Jiao Tong University, 2025, 59(10): 1533-1545.

Figures/Tables 14

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结温计算方法	α	热耦合	降阶	计算量
文献[32]	×	×	×	小
文献[13]	30°	×	×	中
文献[25]	√	√	×	大
本文所提	√	√	√	较小

结温计算方法	最高结温/℃	相对误差/%
文献[32]	133.4313	14.64
文献[13]	128.1660	10.12
文献[25]	120.6680	3.68
本文	120.0053	3.11
ANSYS有限元仿真	116.3870

结温计算方法	最高结温/℃	相对误差/%
文献[32]	221.0390	65.58
文献[13]	194.4444	45.66
文献[25]	138.7400	3.93
本文	138.3585	3.65
ANSYS有限元仿真	133.4912

结温计算方法	冷却液流量/(L·min^-1)
	2		4		6		8
	结温/℃	相对误差/%	结温/℃	相对误差/%	结温/℃	相对误差/%	结温/℃	相对误差/%
文献[32]	210.7220	14.56	134.1570	13.72	69.0504	7.06	66.5854	5.16
文献[13]	203.2940	10.52	129.4640	9.74	68.1962	5.74	65.1663	2.92
文献[25]	190.2720	3.44	125.2670	6.19	66.8614	3.67	63.7959	0.76
本文	184.9080	0.53	120.5060	2.15	65.8779	2.14	63.6721	0.56
ANSYS有限元仿真	183.9420		117.9700		64.4967		63.3162