上海交通大学学报 ›› 2025, Vol. 59 ›› Issue (10): 1546-1557.doi: 10.16183/j.cnki.jsjtu.2023.553
收稿日期:2023-11-03
修回日期:2024-01-29
接受日期:2024-03-15
出版日期:2025-10-28
发布日期:2025-10-24
通讯作者:
葛国伟,博士,副教授;E-mail: ggw@zzu.edu.cn.
作者简介:程 显(1982—),教授,博士生导师,主要从事高压电器及高压新技术的研究,着重研究混合断路器技术、多断口真空开关技术.
基金资助:
CHENG Xian, LI Guanjun, GE Guowei(
), DU Shuai, ZHANG Wanlong
Received:2023-11-03
Revised:2024-01-29
Accepted:2024-03-15
Online:2025-10-28
Published:2025-10-24
摘要:
真空断路器作为一种环保型开关设备,具有广泛的应用前景,但其在单断口和多断口结构中均存在真空灭弧室主屏蔽罩电位分布不均问题,且在罐式结构中该问题更为显著.为研究主屏蔽罩电位分布对真空灭弧室内部绝缘性能的影响,本文建立了真空灭弧室主屏蔽罩分压模型,并利用COMSOL软件进行仿真计算.通过在真空灭弧室外侧构造电容以调节主屏蔽罩电位占断口电位的比例,得到主屏蔽罩电位变化对内部电场分布的影响规律.在此基础上,以10 kV真空灭弧室为对象,开展不同主屏蔽罩分压比例下的工频耐压与雷电冲击耐压实验.结果表明:真空灭弧室内部电场强度随主屏蔽罩电位的升高呈先下降后上升的趋势,当主屏蔽罩分压为50%时,真空灭弧室内部最大场强达到最小值.实验与仿真结果基本一致:在触头开距为6 mm的条件下,主屏蔽罩电位为断口间电位50%时工频击穿电压提高5.4%, 雷电冲击电压提高6.7%.本研究为提升真空灭弧室内部绝缘性能以及推动更高电压等级真空断路器的应用提供了参考.
中图分类号:
程显, 李冠军, 葛国伟, 杜帅, 张万隆. 主屏蔽罩电位分布对真空灭弧室内部绝缘性能影响[J]. 上海交通大学学报, 2025, 59(10): 1546-1557.
CHENG Xian, LI Guanjun, GE Guowei, DU Shuai, ZHANG Wanlong. Effect of Potential Distribution of Main Shield on Internal Insulation Performance of Vacuum Interrupter[J]. Journal of Shanghai Jiao Tong University, 2025, 59(10): 1546-1557.
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