考虑三维横向热传导的光储微网系统接口变换器IGBT结温计算方法

doi:10.16183/j.cnki.jsjtu.2023.577

上海交通大学学报 ›› 2025, Vol. 59 ›› Issue (10): 1533-1545.doi: 10.16183/j.cnki.jsjtu.2023.577

• 新型电力系统与综合能源 • 上一篇下一篇

考虑三维横向热传导的光储微网系统接口变换器IGBT结温计算方法

徐洋¹, 肖迁¹^,²(), 贾宏杰¹, 金昱¹, 穆云飞¹, 陆文标¹

¹ 天津大学智能电网教育部重点实验室, 天津 300072
² 天津大学佐治亚理工深圳学院, 深圳 518055

收稿日期:2023-11-14 修回日期:2023-12-23 接受日期:2023-12-29 出版日期:2025-10-28 发布日期:2025-10-24
通讯作者: 肖迁,副教授,博士生导师;E-mail:xiaoqian@tju.edu.cn.
作者简介:徐洋(1997—),硕士生,从事功率模块结温计算及变换器热管理研究.
基金资助:
国家自然科学基金(52107121);国家自然科学基金(52222704);广东省基础与应用基础研究基金(2022A1515240047)

Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction

XU Yang¹, XIAO Qian¹^,²(), JIA Hongjie¹, JIN Yu¹, MU Yunfei¹, LU Wenbiao¹

¹ Key Laboratory of Smart Grid of the Ministry of Education, Tianjin University, Tianjin 300072, China
² Georgia Tech Shenzhen Institute, Tianjin University, Shenzhen 518055, China

Received:2023-11-14 Revised:2023-12-23 Accepted:2023-12-29 Online:2025-10-28 Published:2025-10-24

摘要/Abstract

摘要：

在光储微网系统中,光储单元接口变换器的输出功率及散热条件常处于变化状态,而现有的绝缘栅双极晶体管(IGBT)结温计算方法难以评估该类变化对IGBT模块热扩散角的影响,导致结温计算精度受限,给系统热管理带来巨大挑战.针对该问题,提出一种考虑三维横向热传导的光储微网系统接口变换器IGBT结温计算方法.首先,在光储微网系统环境下,考虑多芯片间热耦合作用,建立功率器件物理热模型;然后,根据所建物理模型,进一步提出一种考虑三维横向热传导的结温计算方法,构建考虑三维横向热传导的热网络模型,有效提升了当前状态热参数及功率模块热扩散角的计算精度;最后,在针翅型散热器结构中通过有限元分析验证所提模型的准确性.仿真结果表明:与多种结温计算方法相比,所提方法在稳态和功率突变工况下结温计算误差均最小,分别约为3.11%和3.65%;相较于忽略热扩散角(α=0)的计算方法,精度分别提升11.53%和61.93%.不同散热条件下,所提方法仍能保持较高的结温精度,且误差最小.

关键词: 光储微网系统, 绝缘栅双极晶体管模块, 结温计算, 三维横向热传导, 有限元分析

Abstract:

It is difficult for the existing junction temperature algorithms of insulated gate bipolar transistor (IGBT) to evaluate the impact on the thermal diffusion angle of the IGBT module under varying output power and heat dissipation conditions of optical storage unit interface converters in optical storage microgrids, which results in limited accuracy of junction temperature algorithm and poses a huge challenge to system thermal management. To address the above issues, a junction temperature algorithm of IGBT in interface converters in optical storage microgrid systems is proposed considering three-dimensional transverse heat conduction (3-D THC). First, a physical thermal model of power devices is established considering the thermal coupling between multiple chips in the optical storage microgrid system. Then, a junction temperature algorithm considering 3-D THC is further proposed based on the established physical model, and a thermal network model considering 3-D THC is established, which effectively improves the calculation accuracy of current state thermal parameters and power module thermal diffusion angle. Finally, the accuracy of the proposed model is verified using finite element analysis in the PinFin heat sink structure. The simulation results show that compared with various junction temperature algorithms, the proposed algorithm has the smallest error in junction temperature calculation under steady-state and sudden power change conditions, with approximately 3.11% and 3.65% respectively, which increases accuracy by 11.53% and 61.93% respectively compared with the algorithm not considering thermal diffusion angle (α=0). The proposed algorithm also has the highest junction temperature accuracy and the smallest error under different heat dissipation conditions.

Key words: optical storage microgrid system, insulated gate bipolar transistor (IGBT) modules, junction temperature calculation, three-dimensional transverse heat conduction (3-D THC), finite element analysis

中图分类号:

TM464

徐洋, 肖迁, 贾宏杰, 金昱, 穆云飞, 陆文标. 考虑三维横向热传导的光储微网系统接口变换器IGBT结温计算方法[J]. 上海交通大学学报, 2025, 59(10): 1533-1545.

XU Yang, XIAO Qian, JIA Hongjie, JIN Yu, MU Yunfei, LU Wenbiao. Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction[J]. Journal of Shanghai Jiao Tong University, 2025, 59(10): 1533-1545.

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结温计算方法	α	热耦合	降阶	计算量
文献[32]	×	×	×	小
文献[13]	30°	×	×	中
文献[25]	√	√	×	大
本文所提	√	√	√	较小

结温计算方法	最高结温/℃	相对误差/%
文献[32]	133.4313	14.64
文献[13]	128.1660	10.12
文献[25]	120.6680	3.68
本文	120.0053	3.11
ANSYS有限元仿真	116.3870

结温计算方法	最高结温/℃	相对误差/%
文献[32]	221.0390	65.58
文献[13]	194.4444	45.66
文献[25]	138.7400	3.93
本文	138.3585	3.65
ANSYS有限元仿真	133.4912

结温计算方法	冷却液流量/(L·min^-1)
	2		4		6		8
	结温/℃	相对误差/%	结温/℃	相对误差/%	结温/℃	相对误差/%	结温/℃	相对误差/%
文献[32]	210.7220	14.56	134.1570	13.72	69.0504	7.06	66.5854	5.16
文献[13]	203.2940	10.52	129.4640	9.74	68.1962	5.74	65.1663	2.92
文献[25]	190.2720	3.44	125.2670	6.19	66.8614	3.67	63.7959	0.76
本文	184.9080	0.53	120.5060	2.15	65.8779	2.14	63.6721	0.56
ANSYS有限元仿真	183.9420		117.9700		64.4967		63.3162

考虑三维横向热传导的光储微网系统接口变换器IGBT结温计算方法

Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction

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