连续性RESET/SET对相变存储器疲劳特性的影响

doi:10.16183/j.cnki.jsjtu.2020.028

上海交通大学学报 ›› 2021, Vol. 55 ›› Issue (9): 1134-1141.doi: 10.16183/j.cnki.jsjtu.2020.028

所属专题：《上海交通大学学报》2021年“无线电电子学与电信技术”专题；《上海交通大学学报》2021年12期专题汇总专辑

连续性RESET/SET对相变存储器疲劳特性的影响

吴磊¹^,², 蔡道林¹(), 陈一峰¹, 刘源广¹^,², 闫帅¹^,², 李阳¹^,², 余力¹^,², 谢礼¹, 宋志棠¹

1.中国科学院上海微系统与信息技术研究所;信息功能材料国家重点实验室;纳米技术实验室, 上海 200050
2.中国科学院大学, 北京 100049

收稿日期:2020-01-22 出版日期:2021-09-28 发布日期:2021-10-08
通讯作者: 蔡道林 E-mail:caidl@mail.sim.ac.cn
作者简介:吴磊(1993-),男,江苏省南通市人,博士生,主要研究方向为相变存储器可靠性研究
基金资助:
国家重点研发计划(2017YFA0206101);国家重点研发计划(2017YFB0701703);国家重点研发计划(2017YFA0206104);国家重点研发计划(2017YFB0405601);国家重点研发计划(2018YFB0407500);国家自然科学基金(61874178);国家自然科学基金(61874129);国家自然科学基金(91964204);国家自然科学基金(61904186);国家自然科学基金(61904189);上海市科委(17DZ2291300);上海市科委(19JC1416801);上海市扬帆计划(19YF1456100)

Impact of Continuous RESET/SET Operations on Endurance Characteristic of Phase Change Memory

WU Lei¹^,², CAI Daolin¹(), CHEN Yifeng¹, LIU Yuanguang¹^,², YAN Shuai¹^,², LI Yang¹^,², YU Li¹^,², XIE Li¹, SONG Zhitang¹

1. Shanghai Institute of Microsystem and Information Technology; State Key Laboratory of Functional Materials for Informatics; Laboratory of Nanotechnology, Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-01-22 Online:2021-09-28 Published:2021-10-08
Contact: CAI Daolin E-mail:caidl@mail.sim.ac.cn

摘要/Abstract

摘要：

为探究连续性RESET操作和连续性SET操作对相变存储器疲劳特性的影响,基于4Mbit相变存储器芯片进行了不同RESET-SET次数比的疲劳特性研究,给出了连续RESET和连续SET操作后相变单元阻值分布的变化情况.将RESET-only与SET-only模式下的疲劳特性与常规疲劳特性进行了对比分析,并对失效原因和修复方法进行了讨论;对比了8种不同RESET-SET次数比下的单元疲劳特性.实验结果表明:连续性RESET操作对相变存储器疲劳特性的影响很小,RESET-only模式下的相变存储器疲劳特性与常规疲劳特性处于同一量级;连续性SET操作会显著降低相变存储器的的疲劳特性,SET-only模式下相变存储器疲劳特性比常规疲劳特性低2个数量级;连续性RESET操作带来的失效无法逆转,而连续性SET操作带来的失效可以通过间隙性施加RESET操作得以修复.

关键词: 相变存储器, 连续性RESET操作, 连续性SET操作, 疲劳特性, 失效改善

Abstract:

In order to explore the effects of continuous RESET operations and continuous SET operations on the endurance characteristic of phase change memory (PCM), the endurance characteristics of PCM at different ratios of RESET-SET times are studied based on a 4Mbit PCM chip. The variation of resistance distributions of PCM after continuous RESET and continuous SET operations are measured. The endurance characteristics of PCM in RESET-only and SET-only operations are compared with the typical endurance characteristic. Besides, the causes and repair methods of failure are also discussed. Moreover, the endurance characteristics of PCM at 8 different RESET-SET ratios are compared. The research results show that continuous RESET operation has little effect on the endurance characteristic of PCM, and the endurance characteristic of PCM in the RESET-only mode is on the same order as the typical endurance characteristic. However, the continuous SET operation has a significantly destructive effect on the endurance characteristic of PCM, and the endurance characteristic of PCM in the SET-only mode is 2 orders of magnitude lower than the typical endurance characteristic. The failure process of PCM caused by continuous RESET operation is irreversible while the failure process of PCM caused by continuous SET operation can be repaired by intermittent RESET operation.

Key words: phase change memory (PCM), continuous RESET operation, continuous SET operation, endurance characteristic, failure improvement

中图分类号:

TN32
TN386

吴磊, 蔡道林, 陈一峰, 刘源广, 闫帅, 李阳, 余力, 谢礼, 宋志棠. 连续性RESET/SET对相变存储器疲劳特性的影响[J]. 上海交通大学学报, 2021, 55(9): 1134-1141.

WU Lei, CAI Daolin, CHEN Yifeng, LIU Yuanguang, YAN Shuai, LI Yang, YU Li, XIE Li, SONG Zhitang. Impact of Continuous RESET/SET Operations on Endurance Characteristic of Phase Change Memory[J]. Journal of Shanghai Jiao Tong University, 2021, 55(9): 1134-1141.

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连续性RESET/SET对相变存储器疲劳特性的影响

Impact of Continuous RESET/SET Operations on Endurance Characteristic of Phase Change Memory

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