非晶硅/晶体硅(a-Si/c-Si)异质结

摘要/Abstract

摘要： 通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析，研究它们对a-Si/c-Si异质结的界面特性，以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现，能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(ShocklyRead-Hall)复合机制转变，有效降低界面复合速率.AFORS-HET软件模拟显示：在c-Si(P)衬底掺杂浓度为1.6×1016 cm-3时，a-Si(N+)发射结掺杂浓度大于1.5×1020 cm-3是获得高电池效率的必要条件；与短路电流密度相比，开路电压受a-Si/c-Si界面态密度影响更明显.

关键词: , 非晶硅/晶体硅；发射结掺杂；界面态密度

Abstract: This paper investigated the influence of a-Si/c-Si band offset, amorphous silicon emitter doping concentration and interface defects density on interface property of a-Si/c-Si structure. Band offset in a-Si(N+)/c-Si(P) hetero-junction and a-Si emitter high level doping is very useful for the transformation of recombination mechanism from dangling bond to SRH(Shockly-Read-Hall). AFORS-HET simulation indicates that a-Si(N+) emitter doping level of over 1.5×1020 cm-3 on c-Si(P) is an indispensable condition for achieving high efficiency. Comparing with density of short circuit current, open circuit voltage of a-Si/c-Si structure cell is much more susceptible to interface defect density.

Key words: amorphous silicon/crystal silicon, emitter doping, interface defect density(Dit)

中图分类号:

TM914.4

汪建强1, 2, 高华2, 张剑2, 张松1, 李晨1, 叶庆好1, 孟凡英1. 非晶硅/晶体硅(a-Si/c-Si)异质结[J]. 上海交通大学学报（自然版）, 2011, 45(06): 798-803.

WANG Jian-Qiang-1, 2 , GAO Hua-2, ZHANG Jian-2, ZHANG Song-1, LI Chen-1, YE Qing-Hao-1, MENG Fan-Ying-1. Property Investigation of a-Si/c-Si Hetero-Junction Structure[J]. Journal of Shanghai Jiaotong University, 2011, 45(06): 798-803.

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