With the development of integrate circuit and artificial intelligence, many kinds of transistors have been invented. In recent years, wide attention has been paid to the oxide thin film transistors due to its ease preparation, low cost, and suitability for mass production. Traditionally used gate dielectric film (such as silicon dioxide film) in oxide thin film transistor owns low dielectric constant, which leads to weak capacitive coupling between the gate dielectric layer and the channel layer. As a result, high voltage (10 V or more) needs to be applied on the gate electrode in order to achieve the purpose of regulating the current of channel layer. Therefore, new oxide thin film needs to be developed. In this work, silane coupling agents (3-triethoxysilypropyla-mine) KH550 solid electrolyte film was obtained by spin coating-process. The KH550 solid electrolyte was used as gate dielectric layer to fabricate low-voltage indium zinc oxide thin film transistor. The surface topography and thickness of KH550 solid electrolyte film were characterized by atomic force microscope and field emission scanning electron microscope, respectively. The capacitance-frequency curve of the sample was measured by impedance analyzer (Soloartron 1260A), and the electrical characteristics of the sample were analyzed by a semiconductor parameter analyzer (Keithley 4200 SCS). A maximum specific capacitance of about 7.3 μF/cm2 is obtained at 1 Hz. The transistor shows a good stability of pulse operation and negative bias voltage, the operation voltage is only 2 V, the current on/off ratio is about 1.24 × 106, and the subthreshold swing is 169.2 mV/dec. The development of KH550 solid electrolyte gate dielectric provides a novel way for the research of oxide thin film transistor.
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