Journal of Shanghai Jiao Tong University

Journal of Shanghai Jiaotong University >

2025 , Vol. 59 >Issue 10: 1533 - 1545

DOI: https://doi.org/10.16183/j.cnki.jsjtu.2023.577

New Type Power System and the Integrated Energy

Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction

  • XU Yang ,
  • XIAO Qian ,
  • JIA Hongjie ,
  • JIN Yu ,
  • MU Yunfei ,
  • LU Wenbiao
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  • 1 Key Laboratory of Smart Grid of the Ministry of Education, Tianjin University, Tianjin 300072, China
    2 Georgia Tech Shenzhen Institute, Tianjin University, Shenzhen 518055, China

Received date: 2023-11-14

  Revised date: 2023-12-23

  Accepted date: 2023-12-29

  Online published: 2024-01-10

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Abstract

It is difficult for the existing junction temperature algorithms of insulated gate bipolar transistor (IGBT) to evaluate the impact on the thermal diffusion angle of the IGBT module under varying output power and heat dissipation conditions of optical storage unit interface converters in optical storage microgrids, which results in limited accuracy of junction temperature algorithm and poses a huge challenge to system thermal management. To address the above issues, a junction temperature algorithm of IGBT in interface converters in optical storage microgrid systems is proposed considering three-dimensional transverse heat conduction (3-D THC). First, a physical thermal model of power devices is established considering the thermal coupling between multiple chips in the optical storage microgrid system. Then, a junction temperature algorithm considering 3-D THC is further proposed based on the established physical model, and a thermal network model considering 3-D THC is established, which effectively improves the calculation accuracy of current state thermal parameters and power module thermal diffusion angle. Finally, the accuracy of the proposed model is verified using finite element analysis in the PinFin heat sink structure. The simulation results show that compared with various junction temperature algorithms, the proposed algorithm has the smallest error in junction temperature calculation under steady-state and sudden power change conditions, with approximately 3.11% and 3.65% respectively, which increases accuracy by 11.53% and 61.93% respectively compared with the algorithm not considering thermal diffusion angle (α=0). The proposed algorithm also has the highest junction temperature accuracy and the smallest error under different heat dissipation conditions.

Key words： optical storage microgrid system; insulated gate bipolar transistor (IGBT) modules; junction temperature calculation; three-dimensional transverse heat conduction (3-D THC); finite element analysis

Cite this article

XU Yang , XIAO Qian , JIA Hongjie , JIN Yu , MU Yunfei , LU Wenbiao . Junction Temperature Algorithm of IGBT for Interface Converter in Optical Storage Microgrid System Considering Three-Dimensional Transverse Heat Conduction[J]. Journal of Shanghai Jiaotong University, 2025 , 59(10) : 1533 -1545 . DOI: 10.16183/j.cnki.jsjtu.2023.577

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