Journal of Shanghai Jiao Tong University

Journal of Shanghai Jiaotong University >

2023 , Vol. 57 >Issue 8: 1078 - 1085

DOI: https://doi.org/10.16183/j.cnki.jsjtu.2022.043

Materials Science and Engineering

Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

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  • 1. School of Mechanical Engineering, Anhui Polytechnic University, Wuhu 241000, Anhui, China
    2. School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
    3. Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu FIN-90014, Finland

Received date: 2022-02-28

  Revised date: 2022-04-13

  Accepted date: 2022-05-24

  Online published: 2022-08-23

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Abstract

Diamond has an extremely high thermal conductivity, making it to have a great potential as a heat dissipation material. Based on the hot filament chemical vapor deposition (HFCVD) technique, diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper. The scanning electron microscopy (SEM) and Raman spectroscopy were adopted for characterizing the samples. The influences of filament power, carbon concentration, and reactive pressure on the growth rate and quality of the diamond films were systematically studied. It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1 600 W, a methane/hydrogen flux ratio of 18/300 (nucleation stage) and 14/300 (growth stage), and a reactive pressure of 4 kPa. The corresponding growth rate is 1.4 μm/h.

Key words： hot filament chemical vapor deposition (HFCVD); diamond film; growth rate; quality; heat dissipation

Cite this article

LI Weihan, QIAO Yu, SHU Da, WANG Xinchang . Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications[J]. Journal of Shanghai Jiaotong University, 2023 , 57(8) : 1078 -1085 . DOI: 10.16183/j.cnki.jsjtu.2022.043

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