Journal of Shanghai Jiao Tong University

Journal of Shanghai Jiaotong University >

2021 , Vol. 55 >Issue 11: 1445 - 1452

DOI: https://doi.org/10.16183/j.cnki.jsjtu.2021.017

Modeling and Experimental Study of Tin Whiskers for 3D Electronic Packaging

Expand
  • 1. Department of Mechanical Engineering, Auburn University, Auburn 36849, USA
    2. College of Engineering Science and Technology, Shanghai Ocean University, Shanghai 201306, China

Received date: 2021-01-18

  Online published: 2021-12-03

Fold

Abstract

The release of compressive stress and atom diffusion have important influences on the growth of whiskers in 3D electronic packaging, and the compressive stress is also one of the main factors for dynamic recrystallization (DRX). By using the mathematical model of growth mechanism and the behavior of tin whisker based on the finite element method, the process of forming whiskers on silicon substrate by 3D electronic packaging tin layer with a typical physical size and structure was simulated. The qualitative analysis and growth of whiskers were realized. By controlling the key parameters such as gas pressure, thermal cycling temperature, and cycle of Ar in the background of the experiment, the external factors and plating process were constructed. The experimental system of accelerated test of internal pressure stress and whisker growth speed, length, and density in the film was constructed. The growth rate and density of whiskers were observed and detected by SEM. The effectiveness of the mathematical model of stress release, atom diffusion, and DRX in 3D electronic packaging tin whiskers was verified by SEM. The quantitative description of whiskers was realized, providing constructive suggestions for reducing whisker problems in future 3D packaging microstructure graphic design.

Key words： compressive stress; atomic diffusion; tin whisker; 3D electronic packaging; mathematical model; accelerated test

Cite this article

WANG Zekun, ZHANG Fuxi . Modeling and Experimental Study of Tin Whiskers for 3D Electronic Packaging[J]. Journal of Shanghai Jiaotong University, 2021 , 55(11) : 1445 -1452 . DOI: 10.16183/j.cnki.jsjtu.2021.017

References

[1] HERRING C, GALT J K. Elastic and plastic properties of very small metal specimens[J]. Physical Review, 1952, 85(6):1060-1061.
[2] 何小健, 王劲, 程剑, 等. 碰击开关锡晶须与引信弹道炸[J]. 探测与控制学报, 2011, 33(2):1-4.
[2] HE Xiaojian, WANG Jin, CHENG Jian, et al. Tin whisker on impact switch and fuze ballistic explosion[J]. Journal of Detection & Control, 2011, 33(2):1-4.
[3] HAN S. Assessment of an electrical shorting and metal vapor arcing potential of tin whiskers[D]. Maryland, USA: University of Maryland, College Park: 2012.
[4] COUREY K J. An investigation of the electrical short circuit characteristics of tin whiskers[D]. Coral Gables, USA: University of Miami, 2008.
[5] LINDBORG U. A model for the spontaneous growth of zinc, cadmium and tin whiskers[J]. Acta Metallurgica, 1976, 24(2):181-186.
[6] HILLMAN D, WILCOXON R. Tin whisker risk assessment of a tin surface finished connector[J]. Surface Mount Technology, 2015, 30(2):68-79.
[7] 周颖. 基于硅通孔的三维电子封装热机械可靠性研究[D]. 武汉: 华中科技大学, 2016.
[7] ZHOU Ying. Research on reliability of through silicon via (TSV) in 3D integration[D]. Wuhan: Huazhong University of Science and Technology, 2016.
[8] AGLAN H A, PRAYAKARAO K R, RAHMAN M K, et al. Effect of environmental conditions on tin (Sn) whisker growth[J]. Engineering, 2015, 7(12):816-826.
[9] LIN S K, YORIKADO Y, JIANG J X, et al. Mechanical deformation-induced Sn whiskers growth on electroplated films in the advanced flexible electronic packaging[J]. Journal of Materials Research, 2007, 22(7):1975-1986.
[10] TU K N, HSIAO H Y, CHEN C. Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy[J]. Microelectronics Reliability, 2013, 53(1):2-6.
[11] KATO T, AKAHOSHI H, NAKAMURA M, et al. Correlation between whisker initiation and compressive stress in electrodeposited tin-copper coating on copper leadframes[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2010, 33(3):165-176.
[12] JIANG J X, LEE J E, KIM K S, et al. Oxidation behavior of Sn-Zn solders under high-temperature and high-humidity conditions[J]. Journal of Alloys and Compounds, 2008, 462(1/2):244-251.
[13] BAATED A, KIM K S, SUGANUMA K, et al. Effects of reflow atmosphere and flux on Sn whisker growth of Sn-Ag-Cu solders[J]. Journal of Materials Science: Materials in Electronics, 2010, 21(10):1066-1075.
[14] XU C, ZHANG Y, FAN C L, et al. Driving force for the formation of Sn whiskers: Compressive stress-pathways for its generation and remedies for its elimination and minimization[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2005, 28(1):31-35.
[15] LAL S, MOYER T D. Role of intrinsic stresses in the phenomena of tin whiskers in electrical connectors[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2005, 28(1):63-74.
[16] VIANCO P T, REJENT J A. Dynamic recrystallization (DRX) as the mechanism for Sn whisker development. Part I: A model[J]. Journal of Electronic Materials, 2009, 38(9):1815-1825.
[17] NIU C J, LEE H, CHEN S R, et al. High-energy lithium metal pouch cells with limited anode swelling and long stable cycles[J]. Nature Energy, 2019, 4(7):551-559.
[18] LIU Y S, LU C J, ZHANG P G, et al. Mechanisms behind the spontaneous growth of Tin whiskers on the Ti2SnC ceramics[J]. Acta Materialia, 2020, 185:433-440.
[19] CHEN W J, LEE Y L, WU T Y, et al. Effects of electrical current and external stress on the electromigration of intermetallic compounds between the flip-chip solder and copper substrate[J]. Journal of Electronic Materials, 2018, 47(1):35-48.
[20] HE Y, REN X, XU Y, et al. Origin of lithium whisker formation and growth under stress[J]. Nature Nanotechnology, 2019, 14(11):1042-1047.
[21] JUNG D H, SHARMA A, JUNG J P. A review of soft errors and the low α-solder bumping process in 3D packaging technology[J]. Journal of Materials Science, 2018, 53(1):47-65.
[22] MIZUGUCHI Y, MURAKAMI Y, TOMIYA S, et al. Effect of crystal orientation on mechanically induced Sn whiskers on Sn-Cu plating[J]. Journal of Electronic Materials, 2012, 41(7):1859-1867.
[23] VIANCO P T, NEILSEN M K, REJENT J A, et al. Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on Sn thin films[J]. Journal of Electronic Materials, 2015, 44(10):4012-4034.
[24] CHO S, KO Y. Finite element analysis for reliability of solder joints materials in the embedded package[J]. Electronic Materials Letters, 2019, 15(3):287-296.
[25] BOZACK M J, SNIPES E K, FLOWERS G T. Influence of small weight percentages of Bi and systematic coefficient of thermal expansion variations on Sn whiskering[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2017, 7(3):338-344.
Options
Outlines

/

〈 〉