上海交通大学学报(自然版) ›› 2011, Vol. 45 ›› Issue (03): 354-0357.
李丹, 戎蒙恬, 殳国华
收稿日期:
2010-03-26
出版日期:
2011-03-30
发布日期:
2011-03-30
基金资助:
上海应用材料研究与发展基金资助项目(09700713900)
LI Dan, RONG Meng-Tian, SHU Guo-Hua
Received:
2010-03-26
Online:
2011-03-30
Published:
2011-03-30
摘要: 探讨了几何规划在基于短沟道模型的互补金属氧化物半导体 (CMOS)电路中的应用.首先采用Level 1模型得到电路的初始规划,然后将所得元件值代入Hspice仿真程序,再从仿真输出的列表文件中取出各CMOS管的静态电压电流变量和等效小信号模型参数.将它们代入以修正因子为规划变量的几何规划算法,在前一次工作点附近搜索本次的最优设计.修正后的电路再次进行Hspice仿真.几何规划和仿真反复交替进行,直到最优化的目标值稳定.模拟集成电路的仿真实例表明,算法对短沟道模型电路是有效的.
中图分类号:
李丹, 戎蒙恬, 殳国华. 短沟道模型模拟集成电路的几何规划优化设计[J]. 上海交通大学学报(自然版), 2011, 45(03): 354-0357.
LI Dan, RONG Meng-Tian, SHU Guo-Hua. Optimal Design for Analog Integrated Circuits Based on ShortChannel Models via Geometric Programming[J]. Journal of Shanghai Jiaotong University, 2011, 45(03): 354-0357.
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