上海交通大学学报

上海交通大学学报（自然版）

• 化学工程 • 上一篇    下一篇

金刚石晶体生长研究进展

赵刚，赵江，张亚非   

  1. （上海交通大学　微纳米科学技术研究院，微米/纳米加工技术国家级重点实验室，薄膜与微细技术教育部重点实验室，　上海　200240）
  • 收稿日期:2009-08-19 修回日期:1900-01-01 出版日期:2010-04-29 发布日期:2010-04-29

Research Progress on Synthetic Diamond Crystals

ZHAO Gang,ZHAO Jiang,ZHANG Yafei   

  1. (Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Nano/Micro Fabrication Technology, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiaotong University, Shanghai 200240)
  • Received:2009-08-19 Revised:1900-01-01 Online:2010-04-29 Published:2010-04-29

摘要： 介绍利用高温高压（HPHT）合成高质量金刚石单晶和化学气相沉积法（CVD）制备金刚石薄膜的设备、方法、工艺参数以及热丝CVD和微波等离子体CVD的优缺点；P型和N型金刚石掺杂研制现状.重点介绍N型金刚石掺杂的困难，氮、锂、钠、磷、硫等杂质的掺杂效果，共掺杂对于金刚石薄膜的影响，以及近年来P型和N型掺杂取得的成果.

关键词: 金刚石, 　高温高压, 　化学气相沉积, 　掺杂

Abstract: This article introduced an overview of the growth of synthetic diamond single crystals, by the highpressure and hightemperature (HPHT) method and the chemical vapor deposition (CVD) method. The advantages and disadvantages of two main CVD technologies, which are hot flame CVD and microwave CVD, were compared. The research development of doping diamond to P and N types,the doping effects of N, Li, Na, P, S, and the impact of BS codoping were also presented.

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