一种三维相变存储器1S1R存储单元电路仿真模型

doi:10.16183/j.cnki.jsjtu.2021.522

上海交通大学学报 ›› 2022, Vol. 56 ›› Issue (12): 1649-1657.doi: 10.16183/j.cnki.jsjtu.2021.522

所属专题：《上海交通大学学报》2022年“电子信息与电气工程”专题

一种三维相变存储器1S1R存储单元电路仿真模型

张光明¹^,³, 雷宇²^,³(), 陈后鹏³, 俞秋瑶³, 宋志棠¹^,³

1.中国科学技术大学微电子学院,合肥 230026
2.上海市纳米科技与产业发展促进中心, 上海 200237
3.中国科学院上海微系统与信息技术研究所,上海 200050

收稿日期:2021-12-21 出版日期:2022-12-28 发布日期:2023-01-05
通讯作者: 雷宇 E-mail:leiyu@mail.sim.ac.cn.
作者简介:张光明(1996-),男,河南省漯河市人,硕士生,现主要从事相变存储器芯片设计研究.
基金资助:
国家自然科学基金项目(61904186);上海市青年科技英才扬帆计划项目(19YF1456100);中国博士后科学基金项目(2019M660094);中国博士后科学基金项目(2021T140465)

A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory

ZHANG Guangming¹^,³, LEI Yu²^,³(), CHEN Houpeng³, YU Qiuyao³, SONG Zhitang¹^,³

1. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
2. Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
3. Shanghai Institute of Microsystem and Information Technology of Chinese Academy of Sciences, Shanghai 200050, China

Received:2021-12-21 Online:2022-12-28 Published:2023-01-05
Contact: LEI Yu E-mail:leiyu@mail.sim.ac.cn.

摘要/Abstract

摘要：

三维相变存储芯片1S1R存储单元由双向阈值选通管(OTS)和相变存储器件(PCM)串联组成.为了解决现有OTS和PCM电路仿真模型不能准确模拟器件电学特性和物理特性、不适用于限制型PCM等问题,提出了一种采用Verilog-A语言实现的1S1R电路仿真模型.该模型实现了对OTS电学特性和PCM相变过程中电流、温度、熔融比例、晶态比例和非晶比例变化的模拟,具有良好的收敛性和较快的仿真速度,仿真结果与器件实际测试结果吻合.与传统模型相比,该模型针对限制型PCM特点,实现了对PCM熔融过程、晶态非线性、熔融电阻率稳定和OTS亚阈值非线性、双向选通特性的模拟和集成.分析了OTS亚阈值非线性参数和读电压窗口的关系,发现当OTS阈值电流约等于PCM阈值电流时读窗口最大;展示了1S1R单元直流和阵列瞬态仿真结果,为三维相变存储器的电路设计和仿真提供了基础.

关键词: 相变存储器, 电路仿真模型, 双向阈值选通管, Verilog-A

Abstract:

The 1S1R storage unit of 3D phase-change memory is composed of ovonic threshold switch selector (OTS) in series with the phase change memory (PCM) device. In order to solve the problems of the current OTS and PCM circuit simulation models, such as not able to accurately simulate the electrical and physical characteristics of devices, and not suitable for confined PCM, a 1S1R spice model based on Verilog-A is proposed. The model simulates the electrical characteristics of OTS and the changes of current, temperature, melting proportion, crystallization proportion and amorphous proportion in the crystallization, melting and quenching of the PCM. The model has a good convergence and fast simulation speed. The simulation results are consistent with the actual test results of the device. Compared with the traditional model, the simulation and integration of confined PCM melting process, crystal nonlinearity, melting resistivity stability and subthreshold nonlinearity, and bidirectional switching characteristics of OTS are realized. The relationship between OTS subthreshold nonlinear parameter and read voltage window is analyzed. It is found that the read window reaches its maximum when OTS threshold current is approximately equal to PCM threshold current. The results of DC simulation of 1S1R cell and transient simulation of array are displayed, providing the basis for circuit design and simulation of 3D phase-change memory.

Key words: phase change memory (PCM), circuit simulation model, ovonic threshold switch selector, Verilog-A

中图分类号:

TN432

张光明, 雷宇, 陈后鹏, 俞秋瑶, 宋志棠. 一种三维相变存储器1S1R存储单元电路仿真模型[J]. 上海交通大学学报, 2022, 56(12): 1649-1657.

ZHANG Guangming, LEI Yu, CHEN Houpeng, YU Qiuyao, SONG Zhitang. A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory[J]. Journal of Shanghai Jiao Tong University, 2022, 56(12): 1649-1657.

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参考文献 25

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参数	取值
阈值电压,U_th/V	3
保持电压,U_hold/V	0.5
关断零偏压阻值,R_OFF/GΩ	40
导通阻值,R_ON/kΩ	40
亚阈值电压常数,U_OFF/V	0.3

参数	取值
器件高度,l/nm	50
底面半径,r/nm	10
结晶温度,T_c/K	473
熔融温度,T_m/K	900
阈值电压,U_th/V	1
晶态热导率,k/(W·m^-1·K^-1)	1.5
比热容,c/(J·m^-3·K^-1)	1.24×10⁶
熔融温度扩散系数,σ_m/K	10
熔融时间常数,τ_m/ns	1
晶态电阻率,ρ_c/(Ω·m)	2×10^-4
非晶态电阻率,ρ_a/(Ω·m)	1
非晶态非线性参数,U_0a/V	0.12
晶态非线性参数,U_0c/V	0.037

来源	OTS亚阈值非线性	PCM结构	PCM熔融过程	PCM晶态非线性	熔融电阻率稳定	直流仿真结果	阵列仿真结果
文献[9]	无	mushroom	有	无	无	无	无
文献[10]		mushroom	无	无		有	有
文献[11]	有	confine	无	无		无	无
文献[13]		mushroom	有	有	无	有	有
本文	有	confine	有	有	有	有	有

一种三维相变存储器1S1R存储单元电路仿真模型

A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory

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