A high-power marine controlled-source electromagnetic transmitter (HP-MCSET) transmits a highfrequencyconversion current on the sea floor. Some problems exist when the direct-current to alternating-current(DC-AC) launch bridge (LB) is used in the marine controlled-source electromagnetic transmitter (MCSET). Thereis a high voltage peak in the LB when the insulated gate bipolar transistor (IGBT) is turned on and off. In somecases, the voltage stress of the IGBT can be exceeded, which may cause IGBT damage. Because the rise of thecurrent steepness is relatively low and the output voltage has a voltage peak in the LB, a snubber circuit is addedto the IGBT to suppress the voltage peak to improve the output current and voltage waveform. The suppressionof the voltage peaks is analyzed and compared for several groups of snubber circuits. To meet the performancerequirements of the MCSET, the optimal snubber circuit is selected to effectively suppress the voltage peaks atan output current of 1 kA. This method is verified by using a 70 kW MCSET and the experimental waveforms areprovided. The simulation of the inductance obstruction load in seawater is necessary to determine the conditionsfor actual marine environment experiments.
SONG Hongxi∗ (宋红喜), ZENG Yijin (曾义金), ZHANG Wei (张卫)
. Snubber Circuit for Marine Controlled-Source Electromagnetic Transmitter[J]. Journal of Shanghai Jiaotong University(Science), 2021
, 26(6)
: 828
-839
.
DOI: 10.1007/s12204-021-2286-4
[1] CONSTABLE S. Ten years of marine CSEM for hydrocarbonexploration [J]. Geophysics, 2010, 75(5):75A67-75A81.
[2] STREICH R. Controlled-source electromagnetic approachesfor hydrocarbon exploration and monitoring on land [J]. Surveys in Geophysics, 2016, 37(1): 47-80.
[3] YUAN Z, ZHANG Y, ZHENG Q. Quantitative analysisof the anti-noise performance of an m-sequence inan electromagnetic method [J]. Journal of Geophysicsand Engineering, 2018, 15(1): 249-260.
[4] CONSTABLE S, SRNKA L J. An introduction to marinecontrolled source electromagnetic methods for hydrocarbonexploration [J]. Geophysics, 2007, 72(2):WA3-WA12.
[5] EVANS R L, TARITS P, CHAVE A D, et al. Asymmetricelectrical structure in the mantle beneath theEast Pacific Rise at 17?S [J]. Science, 1999, 286(5440):752-756.
[6] ORANGE A, KEY K, CONSTABLE S. The feasibilityof reservoir monitoring using time-lapse marine CSEM[J]. Geophysics, 2009, 74(2): F21-F29.
[7] YU F, ZHANG Y. Modeling and control method forhigh-power electromagnetic transmitter power supplies[J]. Journal of Power Electronics, 2013, 13(4): 679-691.
[8] SONG H, ZHANG Y, GAO J, et al. Clamping-diodecircuit for marine controlled-source electromagnetictransmitters [J]. Journal of Power Electronics, 2018,18(2): 395-406.
[9] HEFNER A R. An improved understanding for thetransient operation of the power insulated gate bipolartransistor (IGBT) [J]. IEEE Transactions on PowerElectronics, 1990, 5(4): 459-468.
[10] IDIR N, BAUSIERE R, FRANCHAUD J J. Activegate voltage control of turn-on di/dt and turn-offdv/dt in insulated gate transistors [J]. IEEE Transactionson Power Electronics, 2006, 21(4): 849-855.
[11] SMITH K M, SMEDLEY K M. Lossless passive softswitchingmethods for inverters and amplifiers [J].IEEE Transactions on Power Electronics, 2000, 15(1):164-173.
[12] YIN S, TSENG K J, SIMANJORANG R, et al. Experimentalcomparison of high-speed gate driver designfor 1.2-kV/120-A Si IGBT and SiC MOSFET modules[J]. IET Power Electronics, 2017, 10(9): 979-986.
[13] VELANDER E, KRUSE L, WIIK T, et al. An IGBTturn-ON concept offering low losses under motor drivedv/dt constraints based on diode current adaption [J].IEEE Transactions on Power Electronics, 2018, 33(2):1143-1153.
[14] HEFNER A R. An investigation of the drive circuit requirementsfor the power insulated gate bipolar transistor(IGBT) [J]. IEEE Transactions on Power Electronics,1991, 6(2): 208-219.
[15] BRYANT A T, LU L, SANTI E, et al. Modeling ofIGBT resistive and inductive turn-on behavior [J].IEEE Transactions on Industry Applications, 2008,44(3): 904-914.
[16] TSENG C J, CHEN C L. A passive lossless snubbercell for nonisolated PWM DC/DC converters [J]. IEEETransactions on Industrial Electronics, 1998, 45(4):593-601.
[17] LIU S, WANG S, WANG L, et al. Analysis and controlof parasitic oscillation of the output rectifier bridge inDC/DC converter [J]. Power Electronics, 2009, 43(10):83-85 (in Chinese).
[18] FINNEY S J, TOOTH D J, FLETCHER J E, et al.The application of saturable turn-on snubbers to IGBTbridge-leg circuits [J]. IEEE Transactions on PowerElectronics, 1999, 14(6): 1101-1110.
[19] CHOI U M, BLAABJERG F, LEE K B. Study andhandling methods of power IGBT module failures inpower electronic converter systems [J]. IEEE Transactionson Power Electronics, 2015 30(5): 2517-2533.
[20] GRBOVIC P J. An IGBT gate driver for feed-forwardcontrol of turn-on losses and reverse recovery current[J]. IEEE Transactions on Power Electronics, 2008,23(2): 643-652.
[21] KJELLQVIST T, OSTLUND S, NORRGA S. Activesnubber circuit for source commutated converters utilizingthe IGBT in the linear region [J]. IEEE Transactionson Power Electronics, 2008, 23(5): 2595-2601.
[22] NIEDERNOSTHEIDE F J, SCHULZE H J, LASKAT, et al. Progress in IGBT development [J]. IET PowerElectronics, 2018, 11(4): 646-653.
[23] TRENTIN A, ZANCHETTA P, WHEELER P, et al.Performance evaluation of high-voltage 1.2 kV siliconcarbide metal oxide semi-conductor field effect transistorsfor three-phase buck-type PWM rectifiers inaircraft applications [J]. IET Power Electronics, 2012,5(9): 1873-1881.
