The dielectric properties of silica at temperature from 300 to 1 600K and at microwave frequency band
are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity
of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of
silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic
conduction loss caused by the defects in silica is very small from the calculation and the value is about 10^5 level
at 2 000 K. The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at
high temperature and microwave band, which is currently still difficult to be measured directly.
ZHANG Ting1,2*(张婷), WU Meng-qiang2 (吴孟强), ZHANG Shu-ren2 (张树人), HE Ming2 (何茗),LI En2 (李恩), WANG Jin-ming3 (王金明), ZHANG Da-hai3 (张大海),HE Feng-mei3 (何凤梅), LI Zhong-ping3 (李仲平)
. Temperature Dependence of Microwave Dielectric Performance of Silica[J]. Journal of Shanghai Jiaotong University(Science), 2012
, 17(6)
: 748
-754
.
DOI: 10.1007/s12204-012-1358-x
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