一种三维相变存储器1S1R存储单元电路仿真模型

张光明, 雷宇, 陈后鹏, 俞秋瑶, 宋志棠

A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory

ZHANG Guangming, LEI Yu, CHEN Houpeng, YU Qiuyao, SONG Zhitang

图6 不同脉冲宽度下PCM阻值与脉冲高度的关系仿真(线型)和实验测得数据(点型)对比

Fig.6 Comparison of simulation of relationship between PCM resistance and pulse height at different pulse widths (lines) and experimental data (dots)