一种三维相变存储器1S1R存储单元电路仿真模型

张光明, 雷宇, 陈后鹏, 俞秋瑶, 宋志棠

A Circuit Simulation Model of 1S1R for 3D Phase-Change Memory

ZHANG Guangming, LEI Yu, CHEN Houpeng, YU Qiuyao, SONG Zhitang

图5 PCM不同非晶比例I-V特性仿真(线型)和实验测得数据(点型)对比

Fig.5 Comparison of simulation of I-V characteristics of PCM at different amorphous proportions (lines) and experimental data (dots)