化学机械抛光（CMP）是提升金刚石表面质量的关键技术，针对现有流场仿真模型过度简化、凹槽内流场模拟困难等问题，提出一种结合多孔介质模型与动网格模型的仿真方法。建立二维等效粗糙度模型并获取对应多孔介质参数，验证其在压降预测中的误差低于5%；基于多孔介质等效替代晶圆-抛光垫薄间隙内抛光垫粗糙度，基于动网格驱动凹槽结构仿真模型流体运动，建立三维仿真模型，结果表明：凹槽的存在降低了临近区域流场速度，抛光垫粗糙度的增加显著降低了多孔介质区域内的流体速度，但在晶圆底面和抛光垫表面附近，边界层效应起主导作用，粗糙度参数的影响较小。

Chemo-mechanical polishing (CMP) is a key technology for improving the surface quality of diamonds. To address issues such as oversimplification in existing flow field simulation models and difficulties in simulating flow fields within grooves, a novel simulation method combining a porous media model with a dynamic mesh model is proposed. A two-dimensional equivalent roughness model was established to obtain corresponding porous media parameters, with verification showing less than 5% error in pressure drop prediction. Based on the equivalent substitution of the porous medium for the wafer-polishing pad thin gap to obtain the polishing pad roughness within the gap, and based on the dynamic grid-driven simulation model of the groove structure to simulate the fluid motion, a three-dimensional simulation model is established. The results indicate that the presence of grooves reduces the flow velocity in adjacent regions, and an increase in the polishing pad's roughness significantly decreases fluid velocity within the porous media zone. However, near the wafer bottom surface and polishing pad surface, the boundary layer effect dominates, rendering the influence of roughness parameters negligible.