学报(中文)

支持逻辑电路辅助计算的相变存储系统设计

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  • 1. 中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室, 上海 200050; 2. 上海天玑数据技术有限公司, 上海 200233

网络出版日期: 2018-01-01

基金资助

中国科学院战略性先导科技专项(XDA09020402),国家重点基础研究发展规划(973)项目(2013CBA01900),国家集成电路重大专项(2009ZX02023-003),国家自然科学基金项目(61376006)

Logical Circuit Accelerated Computing for Phase Change Memory Based Storage System

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  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. Shanghai Phegda Data Technology Co., Ltd., Shanghai 200233, China

Online published: 2018-01-01

摘要

设计了一种支持逻辑电路辅助计算的相变存储系统,将计算密集型任务卸载至基于逻辑电路的相变存储器(PCM)中,以解决由于大量数据迁移而造成的传输瓶颈问题;同时,利用逻辑电路的并行执行能力来实现对数据的高效处理,并利用PCM的独特优势来提高系统的整体性能.结果表明,所提出的相变存储系统比传统的数据处理方式的性能更佳.

本文引用格式

李鸽子1,陈小刚1,陈后鹏1,焦圣品2,宋志棠1,陈邦明1 . 支持逻辑电路辅助计算的相变存储系统设计[J]. 上海交通大学学报, 2018 , 52(1) : 90 -95 . DOI: 10.16183/j.cnki.jsjtu.2018.01.014

Abstract

A phase change memory (PCM) based storage system with novel logical device is proposed, and it can off-load compute-intensive tasks from sever to the storage. In such a way, the proposed PCM-based storage system can avoid extra data transfer and improve efficiency of data processing with parallelism capability of logical device. Moreover, PCM promises to increase the overall system performance due to its unique features. Experimental results demonstrate that the proposed system is vastly superior to the traditional way.

参考文献

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